Semiconductor intergrated circuit device, method of manufacturing the same, and method of driving the same

ABSTRACT

A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

CROSS-REFERENCES TO RELATED APPLICATION

This application is a division of U.S. patent application Ser. No.13/244,181 filed on Sep. 23, 2011, which claims priority under 35 U.S.C.119(a) to Korean application number 10-2011-0069624, filed on Jul. 13,2011, in the Korean Patent Office. The disclosure of each of theforegoing application which is incorporated by reference in its entiretyas if set forth in full.

BACKGROUND OF THE INVENTION

1. Technical Field

The present invention relates to a semiconductor integrated circuitdevice, and more particularly, to a semiconductor integrated circuitdevice including a phase-change memory having a stacking structure, amethod of manufacturing the same, and a method of driving the same.

2. Related Art

A nonvolatile memory device, for example, a phase-change memory device,may include a phase-change material that changes resistance according toa temperature. Typically, there is a chalcogenide (GST)-based material,which is comprised of germanium (Ge), antimony (Sb) and tellurium (Te),as the phase-change material. The phase-change material changes toeither an amorphous state or a crystalline state based on a temperaturethat defines two states “reset” (or logic “1”) or “set (or logic “0”).

In a dynamic random access memory (DRAM) application, a phase-changememory device may include a plurality of memory cells defined by wordlines and bit lines. Each of the plurality of memory cells may include avariable resistor, including a phase-change mate and a switching device,which selectively drives the variable resistor.

In the phase-change memory device, the word line may be provided in ajunction region within a semiconductor substrate, the bit line may beprovided in an interconnection region, and a diode or transistor may beused as the switching device.

It is useful to improve a memory cell density in the phase-change memorydevice and reduce the size of a chip area. However, reducing a minimumfeature size of the memory cells is limited by an exposure source.

SUMMARY

The present invention is directed to integrating more unit cells withina limited area.

According to one aspect of an exemplary embodiment, a semiconductorintegrated circuit device includes a semiconductor substrate, an upperelectrode extending from a surface of the semiconductor substrate with apredetermined height, a plurality of switching structures stacked andextending from both sidewalls of the upper electrode in a directionparallel to the surface of the semiconductor substrate, and aphase-change material layer disposed between the plurality of switchingstructures and the upper electrode.

According to another aspect of another exemplary embodiment, asemiconductor integrated circuit device includes a semiconductorsubstrate, an upper electrode formed on a surface of the semiconductorsubstrate in a pillar shape and substantially connected to a bit line, aplurality of switching structures extending from a sidewall of the upperelectrode in a direction parallel to the surface of the semiconductorsubstrate, and a phase-change material layer disposed between theplurality of switching structures and the upper electrode andphase-changed according to an operation of the plurality of switchingstructures. The plurality of switching structures is alternativelystacked with an insulating layer being interposed. The plurality ofswitching structures is electrically connected to different word linesfrom each other.

According to still another aspect of another exemplary embodiment, asemiconductor integrated circuit device includes a semiconductorsubstrate, an upper electrode formed on the surface of the semiconductorsubstrate in a pillar type and substantially connected to a bit line, aplurality of switching structures extending from a sidewall of the upperelectrode in a direction parallel to the surface of the semiconductorsubstrate, and a phase-change material layer formed along a bottomsurface and a side surface of the upper electrode and be in partialcontact with the plurality of switching structures to be phase-changed.The bit line is formed on a surface above the plurality of switchingstructures. The plurality of switching structures are alternativelystacked with an insulating layer being interposed and electricallyconnected to difference word lines, respectively and the bit line andthe word line are substantially perpendicular to each other.

According to yet another aspect of another exemplary embodiment, amethod of fabricating a semiconductor integrated circuit device isprovided. The method includes forming a multi-layered insulatingstructure on a semiconductor substrate, forming a vertical hole in apredetermined portion of the multi-layered insulating structure, forminga plurality of horizontal holes in the multi-layered insulatingstructure at both sides of the vertical hole and extending in adirection parallel to the semiconductor substrate, forming switchingstructures in the plurality of horizontal holes, respectively, forming aphase-change material layer formed on sidewalls of the switchingstructures, and forming an upper electrode within the vertical hole tobe in contact with the phase-change material layer.

According to yet another aspect of another exemplary embodiment, amethod of driving a semiconductor integrated circuit device is provided.The method includes applying 0V to a word line connected to one of theplurality of switching structures which drives a cell to be selected andapplying a programming voltage to non-selected word lines, and applyinga write voltage or a read voltage to a bit line of the plurality of bitlines corresponding to the cell to be selected, and causing non-selectedbit lines to be floating or grounded.

These and other features, aspects, and embodiments are described belowin the section entitled “DESCRIPTION OF EXEMPLARY EMBODIMENT”.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and advantages of the subjectmatter of the present disclosure will be more clearly understood fromthe following detailed description taken in conjunction with theaccompanying drawings, in which:

FIGS. 1A to 1F are plan views sequentially illustrating a process ofmanufacturing a semiconductor integrated circuit device according to anexemplary embodiment;

FIGS. 2A to 2I are cross-sectional views taken along a bit lineextension direction of FIGS. 1A to 1F;

FIG. 2J is a perspective view illustrating a semiconductor integratedcircuit device according to an exemplary embodiment;

FIGS. 3A to 3I are cross-sectional views taken along a word lineextension direction of FIGS. 1A to 1F;

FIG. 4 is a plan view illustrating a peripheral circuit area accordingto an exemplary embodiment;

FIG. 5 is a plan view illustrating a method of driving a semiconductorintegrated circuit device according to an exemplary embodiment;

FIG. 6 is a plan view illustrating an area of a unit cell of asemiconductor integrated circuit device according to an exemplaryembodiment;

FIG. 7 is a cross-sectional view illustrating a semiconductor integratedcircuit device according to another exemplary embodiment;

FIG. 8 is a plan view illustrating a semiconductor integrated circuitdevice according to another exemplary embodiment and

FIGS. 9 to 13 are cross-sectional views illustrating semiconductorintegrated circuit devices according to other exemplary embodiments.

DESCRIPTION OF EXEMPLARY EMBODIMENT

Exemplary embodiments are described herein with reference tocross-sectional illustrations that are schematic illustrations ofexemplary embodiments (and intermediate structures). As such, variationsfrom the shapes of the illustrations as a result, for example, ofmanufacturing techniques and/or tolerances, are to be expected. Thus,exemplary embodiments should not be construed as limited to theparticular shapes of regions illustrated herein but may be to includedeviations in shapes that result, for example, from manufacturing. Inthe drawings, lengths and sizes of layers and regions may be exaggeratedfor clarity. Like reference numerals in the drawings denote likeelements. It is also understood that when a layer is referred to asbeing “on” another layer or substrate, it can be directly on the otheror substrate, or intervening layers may also be present.

A phase-change memory device will be described as an example of thesemiconductor integrated circuit device in the exemplary embodiment.

First, referring to FIGS. 1A, 2A, and 3A, a first material layer 105 anda second material layer 110 that have different etch selectivity fromeach other are alternatively stacked on a semiconductor substrate 100 toform a stacked insulating structure. The stacked insulating structurehas the first material layer 105 formed on a surface of thesemiconductor substrate 100 and in an uppermost layer. The stackedinsulating structure is patterned in a rectangular prism shape extendingin the bit line extension (BL) direction. This patterning forms arectangular prism stacking structure L. The rectangular prism stackingstructure L may be used as an active region of a phase-change memorydevice. The first material layer 105 may include an insulating layerformed of a silicon oxide layer, and the second material layer 110 mayinclude an insulating layer formed of a silicon nitride layer.

Subsequently, referring to FIGS. 1B and 3B a third material layer 115 isdeposited to a designed thickness on a resultant structure including thesemiconductor substrate 100 and the rectangular prism stackingstructures L between the rectangular prism stacking structures L. Thethird material layer 115 may be formed of substantially the same siliconoxide-based insulating layer as the first material layer 105.

Referring to FIGS. 1C, 2B, and 3C a vertical hole HP is formed centrallyin the rectangular prism stacking structures L. The vertical hole HP isformed the WL direction and has a fixed height from the surface of thesubstrate 100.

Referring to FIGS. 2C and 3D, a pull-back process is performed to removethe second material layer 110 of the rectangular prism stackingstructure L, thereby forming a plurality of horizontal holes HH. Thesecond material layer 110 is removed in the pull-back process by anetching material that enters through the vertical hole HP to formhorizontal holes HH in a region where the second material layers 110were formed. For example, when the second material layers 110 aresilicon nitride layers, only the second material layers 110 may beselectively removed by dipping a resultant structure of thesemiconductor substrate 100 in an etching material, for example, aphosphoric acid (PH₃) solution. Although the second material layers 110are selectively removed, the first and third material layers 105 and 115were formed in a lattice shape so that the rectangular prism stackingstructure L does not collapse.

Referring to FIGS. 2D and 3E an n⁺-polysilicon layer 120 is formedwithin each of the horizontal holes HH. The n⁺-polysilicon layers 120may first be deposited, and then a pull-back process may be performed sothat the n⁺-polysilicon layers 120 partially fill each of the horizontalholes HH. Spaces S1 are provided between the n⁺-polysilicon layers 120and the vertical hole HP in each horizontal hole HH.

Referring to FIGS. 2E and 3F, p⁺-polysilicon layers 125 are formed inthe spaces S1 and partially fill the spaces S1. The part of the spacesS1 that is not filled by the p⁺ polysilicon layers 125 will hereinafterbe called spaces S2. The p⁺-polysilicon layer 125 may also be formed bya deposition process and a pull-back process. FIG. 1C illustrates adotted line extending in the WL direction. The line is shifted in the BLdirection to illustrate the addition of the p⁺ polysilicon layers 125.

Referring to FIG. 2F ohmic contact layers 130 are formed next to thep⁺-polysilicon layer 125 in the spaces S2. The ohmic contact layers 130may be formed of a silicide layer. Heating electrodes 135 are formednext to the ohmic contact layer 130 to fill the spaces S2. The heatingelectrodes 135 may be formed of a titanium/titanium nitride (Ti/TiN)layer. However, exemplary embodiments of the present invention are notlimited to a Ti/TiN layer, and the heating electrodes 135 may be formedof various materials. The heating electrodes 135 may completely fill thespace S2. Through the above described process, a switching structure isformed including the n⁺ polysilicon layers 120, the p⁺ polysiliconlayers 125, the ohmic contact layers 130, and the heating electrodes135. The switching structure includes a diode formed of the n⁺polysilicon layers 120, the p⁺ polysilicon layers 125.

Referring to FIGS. 1D, 2G, and 3G, a phase-change material layer 140 andan upper electrode layer 145 are sequentially formed on a resultantsurface including the semiconductor substrate 100 and the switchingstructure. The phase-change material layer 140 may be formed of achalcogenide (GST) layer, but exemplary embodiments of the presentinvention are not limited to a chalcogenide (GST) layer. Although notshown, a resistive memory layer, other than the phase-change materiallayer 140, may be formed so that the semiconductor integrated circuitdevice may be driven as a resistive memory device. The phase-changematerial layer 140 is formed above the uppermost first material layers105 of the switching structure and along the sidewall of the verticalhole HP so that the phase-change material layer 140 is in contact withthe respective heating electrodes 135. The upper electrode 145 may fillthe vertical hole and cover the switching structure.

Referring to FIGS. 1E, 2H, and 3H, the upper electrode layer 145 and thephase-change material layer 140 are patterned so that the upperelectrode layer 145 and the phase-change material layer 140 remain inand around the vertical hole HP. The etching process forms a phasechange structure that may be, for example, a resistive memo y unitincluding an upper electrode 145 a and the phase-change material layer140. As shown in FIG. 2H, switching structures are formed on both sidesof the resistive memory unit. Referring to FIG. 2I, the n⁺-polysiliconlayers 120 and the first material layers 105 are pyramid-processed sothat both sides of the stacking structure are exposed in a cascadedshape. The pyramid-processing is completed by iteratively performing aphotoresist sliming process and a reactive ion etching process.

Referring to FIGS. 1F, 2J, and 3I, a first interlayer insulating layer150 is formed on a resultant structure of the semiconductor substrate100 including the pyramid-processed stacking structure and etched toform contact holes (not shown) exposing an edge of the n⁺-polysiliconlayers 120 exposed by the first material layers 105. A first metalmaterial fills the contact holes to form a first metal contact unit 155s, and first metal interconnections 160 are formed on the first metalcontact units 155. The first metal interconnection 160 may be a wordline of the phase-change memory device. A second interlayer insulatinglayer 165 is formed on the first interlayer insulating layer 150 andetched to form a via hole (not shown) exposing the upper electrode 145a. A second metal contact until 170 fills the via holes. Next, a secondmetal interconnection 180 is formed on the second interlayer insulatinglayer 165 to be in contact with the second metal contact unit 170. Thesecond metal interconnection 180 may be a bit line of the phase-changememory device. The bit line 180 may be substantially perpendicular tothe word line 160.

Referring to FIG. 4, the word line 160 is electrically connected to ametal word line 260 disposed in the peripheral circuit area 250 in aperiphery of a cell region. The reference symbol WLC denotes a contactfor connecting the metal word line 260 to the word line 160. However,the exemplary embodiments of the present invention are not limited tothe above-described arrangement and the peripheral circuit area 250 maybe configured in various shapes.

As shown in FIG. 5, a word line 160 (hereinafter, a select word line)connected to a specific cell Cell_a. A voltage of 0V may be applied tothe switching structure of a specific cell Cell_a if the specific cellCell_a is selected. A program voltage Vppx may be applied tonon-selected word lines 160.

Next, a write voltage V_write or a read voltage V_read may be applied toa bit line 180 corresponding to the specific cell Cell_a, and othernon-selected bit lines 180 are floating or grounded. Through thisprocess, the specific cell Cell_a may write or read.

Referring to FIG. 6, an average area of a unit memory cell mc of thephase-change memory cell according to an exemplary embodiment may beexpressed in the following equation.average area of a unit memory cell=2F×(4F+nF)/n  (Equation)

where F denotes a minimum feature size and n denotes the number ofdiodes stacked.

The following table shows an average area according to the number ofdiodes stacked.

TABLE Average n (Number of diodes stacked) area of unit memory cell 44.0 F2 8 3.0 F2 16 2.5 F2

As the number of diodes stacked is increased, an average area of theunit memory cell is reduced.

As described above, by stacking memory cells at both sides of aphase-change pattern line disposed in plurality, cell integrationdensity can be significantly improved.

Referring to FIG. 7, although only a switching device was formed withina horizontal hole in the above-described exemplary embodiment, barriermetal layers 200 may also be formed on outer sides of n⁺-polysiliconlayers 120. First metal contacts 155 are in in contact with the barriermetal layers 200 so that a resistance of the switching device isreduced. The barrier metal layer 200 includes, for example, tungsten(W), TIN or Ti/TiN. Further, the barrier metal layer 200 may bedeposited and etched back to be formed before the n⁺-polysilicon layer120 is formed.

Referring to FIG. 8, in another exemplary embodiment, a resistive memoryunit 145 b may be formed in a pillar type so that the resistive memoryunit 145 b remains at a connection portion with a bit line 180.

Referring to FIG. 9, in an exemplary embodiment, a phase-change materiallayer 140 is formed within a horizontal hole HH in a buried type.Although the bit line 180 is disposed over the word line 160 in theabove-described embodiment, a bit line 180 a is disposed between asubstrate 100 and a lowermost first material layer 105 of a rectangularprism stacking structure. If the bit line 180 is formed below theswitching structure, a total height of the phase-change memory devicecan be reduced and more switching structures may be deposited.

Although it is illustrated that first metal contact units 155 aresimultaneously in contact with a plurality of switching structures inFIG. 9 for illustration purposes, for example, only one first metalcontact unit 155 is substantially contacted with any one switchingstructure.

Referring to FIG. 10, an exemplary embodiment illustrates thephase-change memory device where an upper electrode 145 a is completelyburied within a vertical hole HP. A process of manufacturing thephase-change memory device before forming a heating electrode 135 is thesame as the process of the above-described exemplary embodiment as shownin FIGS. 2A to 2G. A phase-change material layer 140 is formed along asidewall of the vertical hole HP, and an upper electrode material isformed to fill the vertical hole HP. Next, the upper electrode materialand the phase-change material layer 140 are chemical mechanical polishedto expose an uppermost first material layer 105. After the polishingstep, the upper electrode 145 a is only formed within the vertical holeHP. A second metal interconnection 180 b, that is, a bit line 180 b, isformed on the uppermost first material layer 105. The secondinterconnection 180 b is also in contact with the upper electrode 145 a.Although it is illustrated that first metal contact units 155 aresimultaneously in contact with a plurality of switching structures inFIG. 10 for illustration purposes, only one first metal contact unit 155is substantially contacted with any one switching structure. Inaddition, although it is illustrated that the metal secondinterconnection 180 b is in contact with the first metal contact units155 when viewed in a cross-section, the second metal interconnection 180b is not substantially in contact with the first metal contact units155.

According to the exemplary embodiment shown in FIG. 10, since a separatemask process to pattern the upper electrode 145 a is not performed, themanufacturing process uses fewer steps.

Referring to FIG. 11, a process of manufacturing the phase-change memorydevice before forming the diode D is the same as the process accordingto the above-described exemplary embodiment as shown in FIGS. 2A to 2E.Heating electrodes 135 are formed within the horizontal hole HH so thatspaces S3 are additionally provided within the horizontal hole HH. Theheating electrodes 135 are not formed to completely fill the horizontalhole HH so that a sidewall of a switching structure is recessed from asidewall of a first material layer 105. Next, a phase-change materiallayer 140 is formed along surfaces of the vertical hole HP and thespaces S3 so that the phase-change material layer 140 is formed to havea convex and concave surface in the spaces S3. An upper electrodematerial fills the vertical hole HP, and the upper electrode materialand the phase-change material layer 140 are chemical mechanical polishedto expose an uppermost first material layer 105. Therefore, an upperelectrode 145 b including a portion protruding into the spaces S3 isformed. Next, a second metal interconnection 180 b that is, a bit line180 b, is formed on the uppermost first material layer 105 to be incontact with the upper electrode 145 b.

Although it is illustrated that the first metal contact units 155 issimultaneously in contact with a plurality of switching structures, onefirst metal contact unit 155 is substantially in contact with any one ofswitching structures in FIG. 11. In addition, although it is illustratedthat the second metal interconnection 180 b is in contact with the firstmetal contact units 155, the second metal interconnection 180 b is notsubstantially in contact with the first metal contact unit 155.

According to the exemplary embodiment shown in FIG. 11, as thephase-change material layer 140 is formed in a convex and concave shape,an effective distance x1 between substantially phase-changed portions ofthe switching structures is formed so that it is advantageous to adisturbance characteristic between unit memory cells.

A process shown in FIG. 12 before a process of depositing a phase-changematerial layer 140 is the same as the process in FIG. 11.

Referring to FIG. 12, the phase-change material layer 140 is depositedand an etch-back or pull-back process is performed to dispose the phasechange material layer 140 within a horizontal hole HH. The phase-changematerial layer 140 does not completely fill the spaces S3 so that thephase-change material layer 140 is formed in a pattern shape. Thereby,additional spaces S4 are provided next to the phase-change materiallayer 140. Next, an upper electrode material is filled within thehorizontal hole HH and the spaces S4, and the upper electrode 145 c ischemical mechanical polished to expose an uppermost first material layer105. Next, a second metal interconnection 180 b is formed on the firstmaterial layer 105.

In the phase-change memory device according to the exemplary embodiment,a phase-change is caused in the phase-change material layer 140corresponding to a contact boundary with a heating electrode 135. InFIG. 12, x2 denotes a phase-changed region.

In the exemplary embodiment shown in FIG. 12, the vertical hole HP has aconvex and concave sidewall so that a distance between the phase-changedregions x2 remains constant. Therefore, a disturbance characteristic ofthe phase-change memory device can be increased.

A method of manufacturing the phase-change memory device in FIG. 13before depositing a phase-change material layer 140 is the same as theprocess of FIG. 11.

Referring to FIG. 13, the phase-change material layer 140 is depositedalong surfaces a vertical hole HP and in the spaces S3. At this time,grooves g are provided on a surface of the phase-change material layer140 in the spaces s3. An insulating layer 143 is deposited on thesurface of the phase-change material layer 140 that fills the grooves g,and the insulating layer 143 is anisotropically etched to be buriedwithin the grooves g. An upper electrode material is filled within thevertical hole HP, and the upper electrode 145 d is chemical mechanicalpolished to expose an uppermost first material layer 105.

In the above-described phase-change memory device, a phase-change x3 iscaused above and below the insulating layer 143. Since the insulatinglayer 143 is interposed between the phase-change material layers 140extending substantially perpendicular to a surface of a substrate 100, acurrent path can be reduced and a current used for the phase-change canbe reduced.

According to the exemplary embodiments of present invention, switchingstructures are stacked and disposed on both sides of an upper electrodeelectrically connected to a bit line to increase integration density.

While certain embodiments have been described above, it will beunderstood that the embodiments described are by way of example only.Accordingly, the devices and methods described herein should not belimited based on the described embodiments. Rather, the systems andmethods described herein should only be limited in light of the claimsthat follow when taken in conjunction with the above description andaccompanying drawings.

What is claimed is:
 1. A method of driving a semiconductor integratedcircuit device which is comprising a semiconductor substrate; an upperelectrode extending from a surface of the semiconductor substrate: aplurality of switching structures stacked and extending from either sideof the upper electrode in a direction parallel to the surface of thesemiconductor substrate; and a phase-change material layer disposedbetween the plurality of switching structures and the upper electrode,comprising: applying a voltage of 0V to a word line of a plurality ofword lines connected to one of the plurality of switching structures,which drives a cell to be selected, and applying a programming voltageto non-selected word lines; and applying a write voltage or a readvoltage to one of a plurality of bit lines corresponding to the cell tobe selected and causing non-selected bit lines to be floating orgrounded.